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PBN Crucibles for Precision Application

Pyrolytic Boron Nitride Crucible can withstand high temperatures in a high vacuum environment. It has excellent thermal conductivity, corrosion resistance, and electrical resistance.

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Pressureless Sintered Silicon Carbide Properties

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Pressureless Sintered Silicon Carbide (SSiC) is manufactured from high-purity ultra-fine silicon carbide powder (sub-micron) in a vacuum furnace at the temperature of 2100℃ – 2200℃. Very strong sintering bonds between the material grains are formed. Direct Sintered SiC is a better grade than Reaction Bonded SiC and is commonly specified for high-temperature work and hard-faced seal components.

Available Form: Tube, Plate, Ball, Seal Ring, Nozzle, Gasket, etc.

Mechanical Properties of Pressureless Sintered Silicon Carbide

Property	Units	Value
Density	g/cm³	3.1-3.2
Vickers hardness	HV0.5	2500
Purity (SiC Percentage)	%	99
Porosity	%	＜0.2
Fracture Toughness	MPa·m^1/2	4
Compressive Strength	MPa	3000
Flexural Strength	MPa	400
Young’s Modulus of Elasticity	GPa	410
Poisson’s Ratio ν		0.15
Thermal Conductivity	W/m.k	100-120
Thermal Expansion Coefficient	i/℃	4*10^-6
Maximum Use Temperature	℃	1600

Related reading: Silicon Carbide: Reaction Sintering vs. Pressureless Sintering

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