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PBN Crucibles for Precision Application

Pyrolytic Boron Nitride Crucible can withstand high temperatures in a high vacuum environment. It has excellent thermal conductivity, corrosion resistance, and electrical resistance.

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Reaction Bonded Silicon Carbide Properties

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Reaction Bonded Silicon Carbide (RBSiC/SiSiC) is sintered with high purity micron silicon carbide and graphite under a vacuum condition at 1600℃. The content of free silicon is under 12%. The surface of reaction sintered SiC is relatively rough.

Available Form: Tube, Plate, Nozzle, etc.

Mechanical Properties of Reaction Bonded Silicon Carbide

Property	Unit	Data
Density	g/cm3	＞ 3.02
Vickers hardness	HV0.5	2100
Purity (SiC Percentage)	%	90
Porosity	%	＜0.1
Bending Strength	MPa	＞250 (20℃)
Bending Strength	MPa	＞280 (1200℃)
Young’s Modulus of Elasticity	GPa	332 (20℃)
Young’s Modulus of Elasticity	GPa	300(1200℃)
Thermal Conductivity	W/m.k	45(1200℃)
Thermal Expansion Coefficient	i/℃	4.5*10^-6
Maximum Use Temperature	℃	1380

Related reading: Silicon Carbide: Reaction Sintering vs. Pressureless Sintering

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