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PBN Crucibles for Precision Application

Pyrolytic Boron Nitride Crucible can withstand high temperatures in a high vacuum environment. It has excellent thermal conductivity, corrosion resistance, and electrical resistance.

SC0957 Silicon Carbide Tray, SiC Tray

Catalog No. SC0957
Molecular Formula SiC
Molecular Weight 40.1
Appearance Black
Melting Point 2,730° C (4,946° F) (decomposes)
Density 3.0 to 3.2 g/cm3
Electrical Resistivity 1 to 4 10x Ω-m
Poisson's Ratio 0.15 to 0.21
Specific Heat 670 to 1180 J/kg-K

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SC0957 Silicon Carbide Tray, SiC Tray

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Silicon Carbide Tray Description

Silicon carbide (SiC) is a lightweight ceramic material with high strength properties comparable to diamond. It has excellent thermal conductivity, low thermal expansion, and is resistant to corrosion from acids. Silicon carbide is an excellent ceramic material for applications requiring good erosion and abrasive resistance. Consequently, it is useful in a variety of applications including spray nozzles, shot blast nozzles, and cyclone components.

Silicon Carbide Tray Specifications

	Recrystallized SiC	Sintered SiC	Reaction Bonded SiC
Purity of Silicon Carbide	99.5%	98%	> 88%
Max. Working Temp. (`C)	1650	1550	1300
Bulk Density (g/cm3)	2.7	3.1	> 3
Appearance Porosity	< 15%	2.5	0.1
Flexural strength (MPa)	110	400	380
Compressive strength (MPa)	>300	2200	2100
Thermal expansion (10^-6/`C)	4.6 (1200℃)	4.0 (< 500℃)	4.4 (< 500℃)
Thermal conductivity (W/m.K)	35~36	110	65
Main characteristics	High temp. High resistance. High purity	Fracture Toughness	Chemical Resistance

Silicon Carbide Tray Applications

-Silicon carbide can be applied in areas such as semiconductors and coating.
-Our silicon carbide trays are widely used in LED industry.

Packing Service

ACM’s Silicon Carbide Trays are carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.