Pyrolytic Boron Nitride (PBN) represents an advanced ceramic crafted from a high-density powder boasting 99.999% purity. The Pyrolytic Boron Nitride Crucible (LEC Type) is formed through a Chemical Vapor Deposition (CVD) process using BCl3 and NH3 under high-temperature, low-pressure conditions.
The Liquid Encapsulation Czochralski (LEC) method employs a liquid covering agent to seal the melt, controlling volatilization for crystal growth. The LEC Type Pyrolytic Boron Nitride Crucible serves as a vessel, facilitating crystal growth within the LEC process.
PBN Mechanical Characteristics
Item |
Data |
Unit |
Density |
g/cm3 |
1.95-2.20 |
Tensile Strength |
MPa |
112 |
Bending Strength |
MPa |
173 |
Compression Strength |
MPa |
154 |
Young's Modulus |
GPa |
18 |
Thermal Conductivity (under 1500℃) |
W/m℃ |
"a" 60 "c" 2 |
Specific Heat |
J/g·℃ |
0.90 (RT) |
Resistivity |
Ω.cm |
2×1015 |
Dielectric Strength |
D.C. volts/mm |
2×1015 |
Dielectric Constant |
- |
"c" 3.07 |
Metal Impurity Content |
ppm |
<10 |
Typical Specifications of PBN LEC Crucible
Inside Diameter (ID) |
Height |
Thickness |
3" |
3" |
0.03" |
4" |
4" |
0.035" |
5" |
5" |
0.035" |
6" |
6" |
0.04" |
7" |
7" |
0.04" |
8" |
8" |
0.04" |
14" |
14" |
0.08" |
The applications of the Pyrolytic Boron Nitride Crucible (LEC Type) extend to the synthesis of semiconductor single crystals, particularly in the growth of materials such as GaAs, InP, GaP, and other III-V compound single crystals. Employed within the Liquid Encapsulation Czochralski (LEC) method, this specialized crucible plays a pivotal role in facilitating the precise and controlled growth of high-quality single crystals essential for advanced semiconductor and compound material research. The Pyrolytic Boron Nitride Crucible's compatibility with LEC processes underscores its significance in the production of materials crucial for electronic and optoelectronic applications.
Our LEC Type Pyrolytic Boron Nitride Crucible is carefully handled during storage and transportation to preserve the quality of our product in its original condition.