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PBN4686 MBE Type Pyrolytic Boron Nitride Crucible

  • Catalog No. PBN4686
  • Material PBN, Pyrolytic Boron Nitride
  • Size Customized
  • Density 1.95-2.20 g/cm3
  • Purity >99.99%
Datasheet

PBN4686 MBE Type Pyrolytic Boron Nitride Crucible

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MBE Type PBN Crucible Description

Pyrolytic Boron Nitride (PBN) represents an advanced ceramic crafted from a high-density powder boasting 99.999% purity. The Pyrolytic Boron Nitride Crucible (MBE Type) is formed through a Chemical Vapor Deposition (CVD) process using BCl3 and NH3 under high-temperature, low-pressure conditions.

MBE Type PBN Crucible Specifications

PBN Mechanical Characteristics

Item

Data

Unit

Density

g/cm3

1.95-2.20

Tensile Strength

MPa

112

Bending Strength

MPa

173

Compression Strength

MPa

154

Young's Modulus

GPa

18

Thermal Conductivity

(under 1500)

W/m℃

"a" 60

"c" 2

Specific Heat

J/g·℃

0.90 (RT)

Resistivity

Ω.cm

2×1015

Dielectric Strength

D.C. volts/mm

2×1015

Dielectric Constant

 -

"c" 3.07

Metal Impurity Content

ppm

<10

Specifications of PBN MBE Crucible

Max. Diameter (ID)

Max. Height

Thickness

12"

17"

customized

MBE Type Pyrolytic Boron Nitride Crucible Applications

The applications of MBE Type Pyrolytic Boron Nitride Crucible are diverse and integral to advanced material synthesis. Some key applications include:

  • MBE Growth of Epitaxial Layers: The MBE Type Pyrolytic Boron Nitride Crucible is utilized in Molecular Beam Epitaxy processes for the precise growth of epitaxial layers on semiconductor substrates. Its high purity and inert nature contribute to the controlled deposition of thin films with exceptional crystal quality.

  • III-V Compound Semiconductor Research: In the field of semiconductor research, the crucible is employed for the synthesis of III-V compound semiconductors. It plays a crucial role in the growth of materials like GaAs, InP, and other compound semiconductors, ensuring high-quality crystal structures.

  • Quantum Dot Fabrication: MBE processes involving the Pyrolytic Boron Nitride Crucible are instrumental in the fabrication of quantum dots. The crucible provides a clean and controlled environment for the precise deposition of materials, contributing to the development of quantum dot-based technologies.

  • Nanostructure Growth: Researchers use the MBE Type Pyrolytic Boron Nitride Crucible to facilitate the growth of nanostructures. Its inert properties and resistance to contamination make it suitable for creating well-defined nano-sized structures with specific electronic and optical properties.

  • Advanced Semiconductor Device Manufacturing: The crucible finds application in the manufacturing of advanced semiconductor devices. It contributes to the production of high-performance electronic components with tailored properties, meeting the demands of modern technology.

MBE Type PBN Crucible Packaging

Our MBE Type Pyrolytic Boron Nitride Crucible is carefully handled during storage and transportation to preserve the quality of our product in its original condition.

Related Documents
Technical brochure for Pyrolytic Boron Nitride Materials, all grades. Revision March 2023.
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